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Comparison ledger

11980 AversusRC2

Agilent 11980 A, J.A. Woollam RC2, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
11980 AAgilent
RC2J.A. Woollam
OEMAgilentJ.A. Woollam
CategoryPrecision OpticsPrecision Optics
Wafer size—200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAgilent 11980 AJ.A. Woollam RC2
Specifications
Wavelength Range1250-1600 nm[1]—
Instrument type—Spectroscopic ellipsometer[2]
Measured quantities—Thicknesses and refractive indices of thin films[2]
Substrate size—Up to 200 mm wafers; chips with a surface larger than the cross section of the incident beam[2]
Light source—Xenon Arc lamp 75W[2]
Wavelength range—210 nm to 2500 nm[2]
Spot size without focusing probes—3 to 4 mm beam diameter[2]
Spot size with focusing probes—120 microns beam diameter[2]
Stage—Motorized XY stage mapping[2]
Vertical motion—Motorized Z and autofocus[2]
Alignment—Automatic tilt alignment[2]
Software—CompleteEASE[2]
Equipment type—Spectroscopic ellipsometer[2]
Measurement capability—Measures thicknesses and refractive indices of thin films (transparent or not)[2]
Measureable material classes—Dielectric and semiconductor films (silicon dioxide, silicon nitride, polysilicon, amorphous silicon); metallic films; organic layers such as carbon and photosensitive resists[2]
Measurement principle—Measures the ratio of reflection coefficients Rp/Rs expressed as Ψ and Δ; refractive index (n) and thickness (t) are resolved by an algorithm from measured Ψ and Δ values[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]epfl.chepfl.ch