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0010-03485 Magnet AssyversusScientific FEI Helios NanoLab 600 FIB

Applied Materials 0010-03485 Magnet Assy, Thermo Fisher Scientific FEI Helios NanoLab 600 FIB, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-03485 Magnet AssyApplied Materials
OEMApplied MaterialsThermo Fisher
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-03485 Magnet AssyThermo Fisher Scientific FEI Helios NanoLab 600 FIB
Specifications
ConfigurationWP AL 300mm PVD[1]Dual beam[5]
OEMApplied Materials[1]—
Model0010-03485[1]—
DescriptionMAGNET ASSY, WP AL 300MM PVD[2]—
ProcessPVD[3]—
Wafer size300mm[4]—
VersionSpares[4]—
Part Number0010-03485[1]—
ManufacturerApplied Materials[1]—
Process TypePVD (Physical Vapor Deposition)[1]—
Application (Material)Aluminum (AL)[1]—
Wafer Diameter (associated)300 mm[1]—
Sample stage—5-Axes motorized X-Y-Z-rotate-tilt stage[5]
Step size—100 nm (Minimum)[5]
High vacuum—10^-10 mbar[5]
X, Y-Axis—150 mm[5]
Z-Axis—10 mm[5]
Tilt range—-5° to +60°[5]
Source—SCHOTTKY Field emitter[5]
Accelerating voltage—350 V to 30 kV (Continuously adjustable)[5]
Beam current—1 pA - 22 nA[5]
Type—Dual beam[5]
Vacuum system—Edwards XDS10 Scroll pump[5]
Travel X, Y-Axis—150 mm[5]
Travel Z-Axis—10 mm[5]
Repeatability—1 µm at 0°; 2 µ at 52°[5]
Electron source—SCHOTTKY Field emitter[5]
Electron accelerating voltage—350 V to 30 kV (Continuously adjustable)[5]
Electron beam current—1 pA - 22 nA[5]
Electron resolution—0.9 nm at 15 kV; 1.4 nm at 1 kV[5]
Ion source—Liquid Gallium ion emitter[5]
Ion optics—Sidewinder Field emission focused ion beam optics[5]
Ion accelerating voltage—0.5 kV to 30 kV (Continuously adjustable)[5]
Ion beam current—1.5 pA - 20 nA[5]
Ion imaging resolution—5 nm at 30 kV[5]
Ion milling resolution—10 nn on Cr thin film[5]
Scanner resolutions—512x442, 1024x884, 2048x1768, 4096x3536 pixels[5]
Minimum dwell time—25 ns/pixel[5]
Patterning maximum resolution—64k x 64k[5]
Patterning maximum dwell—25 ms/pixel[5]
Detectors—In-lens SE and BSE True Lens Detector (TLD); Everhart-Thornely SE Detector (ETD); 14-Segments solid state STEM II detector; Chamber viewing IR CCD camera[5]
Controller—Microscope controller; LCD Monitor, 19"; Screen resolution 1280x1024; Optical mouse; Chamber door mounted interface for manipulators[5]
Imaging resolution—5 nm at 30 kV[5]
Milling resolution—10 nn on Cr thin film[5]
Resolution—512x442, 1024x884, 2048x1768, 4096x3536 pixels[5]
Maximum resolution—64k x 64k[5]
Minimum dwell—25 ns/pixel[5]
Maximum dwell—25 ms/pixel[5]
Screen resolution—1280x1024[5]
Instrument type—Dual beam focused ion beam (FIB)[5]
Stage—5-axis motorized X-Y-Z-rotate-tilt stage[5]
Stage travel X/Y—150 mm[7]
Stage travel Z—10 mm[5]
Vacuum pump—Edwards XDS10 scroll pump[5]
Sample stage step size—100 nm minimum[5]
Maximum dwell time—25 ms/pixel[5]
Additional included item—Broad beam plasma source ion column (focus 250 µm)[5]
Included documentation—Manuals included[5]
Manipulator—Does not include manipulator[5]
Stage control—5 axes motorized XYZRT 6 in UHR stage with piezo control[7]
Magnification—69x to 2,300,000x[7]
Detector—Through-lens detection for SE and BSE[7]
STEM detector—Retractable[7]
Stage tilt—-10° to +60°[7]
Optional accessories—Omniprobe Autoprobe 200; Ibss Group GV10x plasma cleaner[7]
Sources (7)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]layla-ec.comlayla-ec.com
  4. [4]fabsurplus.comfabsurplus.com
  5. [5]inventory listing
  6. [6]waferpedia.comwaferpedia.com
  7. [7]waferpedia.comwaferpedia.com