Waferpedia

Comparison ledger

0010-21246 PartversusTCP 9400

Applied Materials 0010-21246 Part, Lam Research TCP 9400, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-21246 PartApplied Materials
TCP 9400Lam Research
OEMApplied MaterialsLam Research
Category——
Wafer size——
Process node——
Introduced——
Production run—1996–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—Lam Research TCP 9400
Cited variants—
Specifications
Etch Technology—Transformer Coupled Plasma (TCP)[2]
RF Frequency—13.56 MHz[2]
Number of RF Power Supplies—2[2]
Maximum Etch Depth—3 µm[2]
Primary Materials Etched—Silicon[2]
Other Materials Etched—Silicon Germanium, Germanium[2]
Gases—Chlorine, He/O2, Helium, Hydrogen Bromide, Nitrogen, Oxygen, Perfluoroethane, Tetrafluoromethane[2]
Substrate Sizes (SNF configuration)—4 inch[2]
Substrate Sizes (standard configuration)—8 inch[3]
Maximum Wafer Load—25 wafers[2]
Transport System—Cassette to cassette[1]
Software—Envision version 1.4[1]
Vintage Year—1996[1]
Platform—Rainbow[1]
Vacuum Pump—Leybold TURBOVAC 1000C[1]
Chamber Type—Ceramic free with waferless auto clean (WAC)[1]
Configuration—Single chamber stand-alone[1]
Inductively Coupled Source—TCP 9400 ESC[1]
CE Certified—Yes[1]
Sources (3)Every fact above is drawn from these public sources
  1. [1]photonicmicrodevices.comphotonicmicrodevices.com
  2. [2]snfguide.stanford.edusnfguide.stanford.edu
  3. [3]Equipment inventory listing