Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Onto Innovation Nanospec 3000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | Nanospec 3000Onto Innovation |
|---|---|---|
| OEM | Applied Materials | Onto Innovation |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Onto Innovation Nanospec 3000 |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | — |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Wavelength range | — | 480-800 nm[3] |
| Wavelength range (alternative) | — | 400-800 nm[4] |
| Film thickness range | — | 250 A to 35 µm[3] |
| Film thickness range (alternative) | — | 100A up to 20um (resolution 50A)[4] |
| Maximum film thickness | — | 30µm[4] |
| Measurement spot size | — | 25 µm[3] |
| Measurement spot size (alternative) | — | 25um, down to 100nm at 40X objective[4] |
| Measurement time | — | 0.25 s to 4 s / site[3] |
| Measurement time (alternative) | — | less than 3 seconds[4] |
| Number of layers | — | 3[3] |
| Number of layers (alternative) | — | up to 3 films[4] |
| Detector | — | Linear diode array detector[3] |
| Reproducibility | — | <2 A[3] |
| Wafer size | — | 3"-6"[3] |
| Wafer size (alternative) | — | up to 6"/150mm[4] |
| Objective magnifications | — | 5X, 10X (default), 50X[5] |
| Spot size per objective | — | 5X: 50 µm; 10X: 25 µm; 50X: 5 µm[5] |