Waferpedia

Comparison ledger

0010 47763versusPlasmalab 100 ICP-RIE

Applied Materials 0010 47763, Oxford Instruments Plasmalab 100 ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010 47763Applied Materials
Plasmalab 100 ICP-RIEOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010 47763Oxford Instruments Plasmalab 100
Specifications
Configuration2nd Source New[1]RF source 300 W, 13.56 MHz[4]
TypeMonopolar Dual Heated[2]—
DescriptionASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3]—
Possible MaterialsAl2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
Model0010-47763[1]—
OEMApplied Materials[1]—
Material (possible)Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
ApplicationFixing wafers in etching process (PVD, CVD, ETCH)[2]—
Quantity available (source)1[2]—
Process gases used—H2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2 and BCl3[4]
Cryo Table w/ operating temp—-150 to 400C[4]
Substrate cooling—using liquid nitrogen (LN2)[4]
Base pressure—5E-7 Torr[4]
Main Chamber Backing Pump—Adixen ADP 122P Dry pump[4]
Main Chamber Turbo Pump—Adixen ATH 1300 Turbo[4]
Load Lock—Adixen ACP 15G Dry pump[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]saulcontrol.comsaulcontrol.com
  3. [3]getspares.comgetspares.com
  4. [4]inventory listing