Comparison ledger
Applied Materials 0010 47763, Plasma-Therm Unaxis ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | Unaxis ICPPlasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | Wafer auto load/unload |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Plasma-Therm Unaxis ICP |
| Specifications | ||
| Configuration | 2nd Source New[1] | Gas Box:[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Gas 1 | — | UFC 1660, Cl2, 100 sccm, +/- 3% accuracy[4] |
| Gas 2 | — | MKS 1479, HBr, 100 sccm, +/- 3% accuracy[4] |
| Gas 3 | — | MKS 1479, SF6, 100 sccm, +/- 3% accuracy[4] |
| Gas 4 | — | UFC 8100, BCl3, 100 sccm 3%, +/- 3% accuracy[4] |
| Gas 5 | — | MKS 1479, O2, 20 sccm 3%, +/- 3% accuracy[4] |
| Gas 6 | — | MKS 1479, He, 20 sccm 3%, +/-3% accuracy[4] |
| Gas 7 | — | UFC 1660, Ar, 100 sccm 3%, +/- 3% accuracy[4] |
| Gas 8 | — | MKS 1479, N2, 20 sccm 3%, +/- 3% accuracy[4] |
| Wafer size | — | Wafer auto load/unload[4] |
| Temperature | — | Watlow 988 Chamber Chuck Temperature Control: (20-300°C) +/- 1°C[4] |
| Generator | — | ENI ACG 6 B[4] |
| Pressure Control Range | — | 100 mTorr[4] |
| VAT Valve Control | — | PM 5[4] |
| Turbo Pump Limit Vacuum | — | 5.0 E-6 Torr[4] |
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