Waferpedia

Comparison ledger

0020 18455 PartversusCentura Ultima+ HDP

Applied Materials 0020 18455 Part, Applied Materials Centura Ultima+ HDP, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 18455 PartApplied Materials
Centura Ultima+ HDPApplied Materials
OEMApplied MaterialsApplied Materials
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 18455 PartApplied Materials Centura
Specifications
ConfigurationShaft,Rf In Local Match, Hdpcvd,Rev3[1]Ch A – Ultima+ (ENI AM200 RF Generator)[2]
Wafer Size (Ultima+ HDP)—6 inch[2]
RF Generator (Ch A)—ENI AM200[2]
Multi-slot cooldown (Ch E)—Present[2]
Platform & Chamber Model—Centura Ultima[3]
Wafer Size (Platform support)—200mm and 300mm[3]
Process Chambers—2[3]
Remote Plasma Source—MKS iAstron[3]
Electrostatic Chuck—Ceramic with backside He, water cooling, wafer temperature monitor[3]
Gas Ring—Ceramic gas nozzles[3]
Center Gas Nozzle/Baffle—Present[3]
Factory Interface Robot—Kawasaki[3]
Load Ports—2[3]
Mainframe—4.0 with metal buffer lid[3]
RF Generators—Top, Side, and Bias[3]
Vacuum System - Throttle Valve—Stepper Turbo Throttle Valve with 3 veins[3]
Vacuum System - Gate Valve—Pendulum Gate Valve[3]
Vacuum System - Turbo Pump—Present[3]
Gas Boxes—15 stick AP Gas Boxes (incl. Methane line)[3]
Endpoint Detector—Foreline FTIR[3]
Foreline—Heater Jacketed[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]media-moov-co.s3.us-west-1.amazonaws.commedia-moov-co.s3.us-west-1.amazonaws.com