Waferpedia

Comparison ledger

Centura TPCC RTP XE+versusPlasmalab 100 ICP 380

Applied Materials Centura TPCC RTP XE+, Oxford Instruments Plasmalab 100 ICP 380, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Etch, null[1]
Side-by-side comparison of selected equipment models
Attribute
Centura TPCC RTP XE+Applied Materials
Plasmalab 100 ICP 380Oxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura TPCCOxford Instruments Plasmalab 100
Specifications
CH AXE+ Non-Toxic ATM[2]—
ConfigurationChemraz O-Ring[2]—
Edge RingS2[2]—
Bearing TypeStandard[2]—
CH BEmpty[2]—
CH CEmpty[2]—
CH DEmpty[2]—
CH ESingle Slot Fast Cooldown[2]—
CH FSingle Slot Fast Cooldown[2]—
Gas Line PurgeN2-10 SLM[2]—
Gas Line 102-10 SLM[2]—
Wafer Size8 inch[2]—
Chamber A ConfigurationXE+ Non-Toxic ATM - Chemraz O-Ring - RGA Port and Valve - MWBC - Edge Ring: S2 Bearing Type: Standard[2]—
Chamber E and F ConfigurationSingle Slot Fast Cooldown[2]—
RobotAsyst LPT2200 SMIF Robot[2]—
ControllerVita Computer Controller (Modular Controller)[2]—
Gas Delivery10 Ra Gas Panel, Top Feed Gas Line Input, Multiple Line Drop Gas Distribution, Gas Line Purge: N2-10 SLM, Gas Line 1: O2-10 SLM, Gas Line 2: N2-20 SLM, Gas Line 3: O2 1 SLM, STEC Z500 MFC Type First Manifold[2]—
Heat ExchangerSMC 40 GPM Stainless Steel Heat Exchanger[2]—
Gas Line 2N2-20 SLM[2]—
Gas Line 302 1SLM SLM[2]—
Gas Line 4None[2]—
Frequency—50 Hz[1]
Voltage—415 Vac 3~[1]
Max rated input current—42 amps[1]
Interrupt current—6KA[1]
Supply voltage—415 Vac 3~[1]
Vintage—2011[1]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing