Comparison ledger
Applied Materials Endura HP, Perkin Elmer 4400, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Endura HPApplied Materials | 4400Perkin Elmer |
|---|---|---|
| OEM | Applied Materials | Perkin Elmer |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Endura | Perkin Elmer 44xx |
| Specifications | ||
| Voltage | 208 VAC[2] | — |
| Configuration | 50/60 Hz[2] | Pump Exhaust GEEX[3] |
| Full Load Current | 416 A[2] | — |
| Maximum System Rating | 150 KVA[2] | — |
| Ampere Rating of Largest Load | 200 A[2] | — |
| Interrupt Current | 10,000 AMPS I.C.[2] | — |
| Power | 208 VAC[2] | 208 V, 3 Phase, 60 A[3] |
| Frequency | 50/60 Hz[2] | — |
| Version | 200 MM[1] | — |
| Vintage | 01.06.2005[1] | 2004[3] |
| Handler Type | — | Manual[3] |
| CDA | — | 60-80 psi[3] |
| Chilled Water | — | 68 F, 2 gpm[3] |
| N2 | — | 50 psi[3] |
| HPN2 | — | 60 psi[3] |
| HPAr | — | 10 psi[3] |
| O2 | — | 10 psi[3] |
| Process Type | — | Sputtering / Physical Vapor Deposition[5] |
| Wafer Size | — | 6 inch[6] |
| Sputtering Types | — | DC, RF, DC-RF bias capable[4] |
| Target Positions | — | Ports for four targets; three utilized (two DC with RF bias, one RF)[4] |
| Load Lock | — | Yes[4] |
| RF Etch Option | — | Yes[4] |
| Pump - Main Chamber | — | Cryotorr 8 cryopump with CTI SC (air-cooled) He compressor[4] |
| Pump - Load Lock | — | Pfeiffer turbopump backed by Trivac rotary vane pump[4] |
| Roughing Pump | — | Ebara A10 roots pump[4] |
| Power Supply | — | Present[3] |
| AC Distribution Box | — | Present[3] |
| Heat Exchanger / Chiller | — | Present[3] |
| Backing Pump | — | Present[3] |
| Cryo Compressor | — | Present[3] |
| Mechanical Pump | — | Present[3] |
| CDA Supply | — | 60-80 psi[3] |
| Chilled Water Supply | — | 68 F, 2 gpm[3] |
| N2 Supply | — | 50 psi[3] |
| HPN2 Supply | — | 60 psi[3] |
| HPAr Supply | — | 10 psi[3] |
| O2 Supply | — | 10 psi[3] |
| Power Requirement | — | 208 V, 3 Phase, 60 A[3] |
| Pump Exhaust | — | GEEX[3] |
| GEM / SECS | — | Present[3] |
| Cables | — | All cables present[3] |
| Standard Manual | — | Included[3] |
| CE Mark | — | No[3] |
| Equipment type | — | Sputtering system[5] |
| Target ports | — | Four target ports[4] |
| Process modes | — | DC and RF, with DC-RF bias capable[4] |
| Options | — | RF etch option[4] |
| Load lock | — | Load lock[4] |
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