Comparison ledger
ASM Epsilon 2000, Kurt Lesker 150LX, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Epsilon 2000ASM | 150LXKurt Lesker |
|---|---|---|
| OEM | ASM | Kurt Lesker |
| Category | Deposition | Deposition |
| Wafer size | 150mm | 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASM Epsilon | Kurt Lesker 150LX |
| Specifications | ||
| Supply Voltage/ Freq | 480/ 50[1] | — |
| System Hand | Right Hand[1] | — |
| Monitor Type | Flat Panel[1] | — |
| Wafer Size | 150mm[1] | — |
| Maint Console | Mini Maint[1] | — |
| CPU | 68040[1] | — |
| Software Version | 7.65[1] | — |
| Comms | HSMS[1] | — |
| RP/ ATM | RP[1] | — |
| Vacuum Load Locks | No[1] | — |
| WHC Gate Valve | Swing[1] | — |
| WHC Robot Arm | Wide[1] | — |
| Reactor Isolation | HVA[1] | — |
| ATM Valve | VAT[1] | — |
| Pressure Controller | MKS 152 Analogue[1] | — |
| PCV Type | MKS 253B[1] | — |
| Choke Valve | Yes[1] | — |
| RP Orientation | Bottom Feed[1] | — |
| Gas Panel Orientation | Top Feed[1] | — |
| Main H2/N2 | 100slm[1] | — |
| Process type | CVD (Chemical Vapor Deposition)[1] | Plasma-enhanced atomic layer deposition (PE-ALD)[4] |
| Wafer sizes supported | 150 mm and 200 mm wafers[3] | — |
| Tool type | single-wafer epitaxy tool[3] | — |
| Supply voltage/frequency | 480/50[1] | — |
| OEM | — | Kurt Lesker[4] |
| Model | — | ALD-150LX[4] |
| Type | — | Plasma-enhanced atomic layer deposition (PE-ALD) system[4] |
| Location | — | Cleanroom[4] |
| Operating mode | — | Load-locked system[4] |
| In situ metrology | — | Film Sense FS-1 Multi-Wavelength ellipsometer[4] |
| Wafer size | — | Up to full 150 mm (6") wafers[4] |
| Process | — | Plasma-enhanced atomic layer deposition (PE-ALD)[4] |
| Substrate size | — | Up to 150mm[5] |
| Substrate heating | — | Up to 600°C[5] |
| Load lock | — | Load-locked system[4] |
| ALD process modes | — | Plasma Enhanced, Thermal only, Dynamic and Static Exposure for HAR, Variable Residence Mode (VRM)[5] |
| Ellipsometry | — | Standard on chamber[5] |
| Precursor inlets to chamber | — | Four (4), standard on chamber, independently heated[5] |
| Precursor sources | — | Up to twelve (12)[6] |
| Precursor types | — | Up to fourteen (14)[5] |
| Plasma source | — | 1 kW RF remote ICP[7] |
| Substrate temperature | — | Up to 600°C[5] |
| Process modes | — | Plasma enhanced, thermal only, dynamic and static exposure for HAR, variable residence mode (VRM)[5] |
| Ellipsometry ports | — | Standard on chamber[5] |
| Precursor inlets | — | Four standard on chamber, independently heated[5] |
| Precursor capacity | — | Up to fourteen vapor draw flow through, bubbler, ozone pulsed gas plasma process gases[5] |
| Substrate handling | — | Load locked single wafer transfer[7] |
| Process gases | — | Argon, oxygen, nitrogen, hydrogen, ammonia, ozone[7] |
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