Comparison ledger
ASML NXE 3400 B EUV, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NXE 3400 B EUVASML | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | ASML | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML NXE 3400 B EUV | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Wafer size | 300 mm (12 inch)[1] | — |
| Node support | 7 nm, 5 nm[2] | — |
| Numerical aperture (NA) | 0.33[2] | — |
| Throughput (wafers per hour) | ≥ 125 (at 20 mJ/cm², die size 26×33 mm, 96 shots)[2] | — |
| Exposure field size | 26 × 33 mm[2] | — |
| Dedicated chuck overlay | 1.4 nm[2] | — |
| Matched-machine overlay | 2 nm[2] | — |
| Sigma range | 0.06 – 1.0[2] | — |
| Reduction factor | 4x[2] | — |
| Level sensor type | UV light based (same as NXE:3350B)[2] | — |
Plan your fab
Building a Lithography process? Get a complete equipment list.
Open the fab equipment planner →