Comparison ledger
ASML PAS 5500 300 C Wafer, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML PAS 5500 | Nikon 1505 |
| Specifications | ||
| SW version | 8.9.0.c[1] | — |
| PC (Sun) | Netra[1] | — |
| Chuck Type | SiC (LC)[1] | — |
| Light source (Cymer Laser) | 5600 KrF[1] | — |
| CLEAR (auto chuck cleaning) | N/A[1] | — |
| STARTSMART (overlay improvement) | N/A[1] | — |
| DoseMapper (CD improvement) | NO[1] | — |
| CPE (Correction per exposure) | NO[1] | — |
| Configuration | Test Streaming (Cycle time improvement, test queue insertion into batch streaming): auditing[1] | 5" reticle[2] |
| Resolution | — | 650 nm[3] |
| Numerical Aperture | — | 0.54[3] |
| Reduction | — | 5x[3] |
| Exposure Field | — | 15 x 15 mm[3] |
| Alignment Accuracy | — | 130 nm[3] |
| Wafer Size | — | 4 inch[2] |
| Light Source | — | g-line[4] |
| Introduction Year | — | 1988[3] |
| NA (Numerical Aperture) | — | 0.54[3] |
| Make | — | Nikon[2] |
| Model | — | 1505 G 6 E[2] |
| Category | — | Stepper[2] |
| Wafer Sizes | — | 4 inch[2] |
| Exposure type | — | g-line[3] |
| NA | — | 0.54[3] |
| Exposure field | — | 9.3 x 18.8 mm[3] |
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