Comparison ledger
Axcelis 200 ACU, Plasma-Therm RIE790, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 ACUAxcelis | RIE790Plasma-Therm |
|---|---|---|
| OEM | Axcelis | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Plasma-Therm RIE790 |
| Specifications | ||
| Configuration | Parts Machine[1] | — |
| Manufacturer | Axcelis[1] | PlasmaTherm[5] |
| Model | 200 ACU[1] | RIE790[5] |
| Tool type | Asher[1] | — |
| Wafer size | 200mm[3] | — |
| Serial number | AU6A356AH[3] | — |
| Computer system | M 200 PC, M 200[4] | — |
| Part number | SC 4572 A[4] | — |
| Volts | 208[4] | — |
| Amps | 30[4] | — |
| Equipment type | Asher[1] | — |
| Wafer configuration | 8 inch[2] | — |
| Process type | — | Reactive ion etch (RIE)[5] |
| Reactor type | — | Parallel plate[5] |
| Chemistries | — | SF6, CHF3, CF4, O2, Ar[5] |
| Etch targets | — | Semiconductors, dielectrics, metals[5] |
| Restriction | — | None[5] |
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