Comparison ledger
Axcelis 200 ACU, Plasma-Therm Versaline ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 ACUAxcelis | Versaline ICP Deep SiliconPlasma-Therm |
|---|---|---|
| OEM | Axcelis | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Plasma-Therm Versaline ICP |
| Specifications | ||
| Configuration | Parts Machine[1] | 30 A, 4-Wire[5] |
| Manufacturer | Axcelis[1] | — |
| Model | 200 ACU[1] | — |
| Tool type | Asher[1] | — |
| Wafer size | 200mm[3] | — |
| Serial number | AU6A356AH[3] | — |
| Computer system | M 200 PC, M 200[4] | — |
| Part number | SC 4572 A[4] | — |
| Volts | 208[4] | — |
| Amps | 30[4] | — |
| Equipment type | Asher[1] | — |
| Wafer configuration | 8 inch[2] | — |
| Phase | — | 208/220 VAC, 3 Phase[5] |
| Process type | — | Inductively coupled plasma etcher[5] |
| Application | — | Deep silicon etch[6] |
| Electrical requirements | — | 208/220 VAC, 3 phase, 30 A, 4-wire, 50/60 Hz[5] |
| Compatible materials | — | Si[6] |
| Incompatible materials | — | III-V / Hi K / Metal[6] |
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