Comparison ledger
Axcelis GSD 200, Varian 160 XP Ion, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | GSD 200Axcelis | 160 XP IonVarian |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | In Air Wafer Handling: | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis GSD 200 | Varian 160 XP Ion |
| Specifications | ||
| Source Head | Enhanced Source w/ Tantalum[1] | — |
| Extraction | 90 kV / 90 kV[1] | — |
| Source Analyzer | Triple Indexed Mass Analysis Magnet & Power Supply[1] | — |
| RGA Resolver | Port[1] | — |
| RGA Chamber | Port[1] | — |
| HYT | Particle Detection Monitor[1] | — |
| Configuration | MER[1] | 150mm High Current IMP[3] |
| Charge Control | E-Shwr IV (Fwd Bias) / P/N: 1183280[1] | — |
| Post Accel Elect | P/N: 1182480[1] | — |
| Flag Faraday | Standard[1] | — |
| SMIF | ASYST ARM 2200[1] | — |
| Compressor | 9600 & 8200[1] | — |
| GeF 4 (High Pressure) | Unit MFC[1] | — |
| PH 3 | (SDS): Unit MFC[1] | — |
| XE | Unit MFC ( E Shower not use)[1] | — |
| Argon (High Pressure) | Unit MFC[1] | — |
| Wafer Size | 6 inch (150 mm)[1] | — |
| Extraction Voltage | 90 kV / 90 kV[1] | — |
| Implant Angle | Two-axis variable (+ / - degrees in both axes)[1] | — |
| Disk Drive Type | Rotary[1] | — |
| Cell Controller | Cell 133[1] | — |
| Operating System | Sun OS[1] | — |
| Protocols | SECS-I & SECS II[1] | — |
| Interface | GM Interface & Ethernet Port[1] | — |
| Wafer size | In Air Wafer Handling:[1] | — |
| Dose Controller | Real Time Patented Dose Control[1] | — |
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