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Comparison ledger

NV 8250versus0216 7696, E 11368072 ESC

Axcelis NV 8250, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
NV 8250Axcelis
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis NV 8250Varian 0216 7696, E 11368072 ESC
Specifications
ConfigurationBackside[1]Platen ADV-S Type[3]
Wafer Sizes8 inch[2]—
Energy Range0-250 keV[2]—
Power Requirement208 VAC, 100 A, 50/60 Hz, 3 Phase[2]—
Programmable Auto Tilt0-75 degrees[2]—
Single Stage Extraction15-40 keV[2]—
Ion Source TypeELS[2]—
Source Material TypeMoly[2]—
Electrostatic Chuck (ESC)Yes[2]—
Parallel Beam using Hybrid ScanningYes[2]—
90 degrees Radially Indexed Dipole MagnetYes[2]—
Signal TowerYes[2]—
SECS II / GEM InterfaceYes[2]—
Cassette InterfaceAsyst Bolt-On SMIF (2), Cassette Stages (3), Automatic Flat/Notch Alignment, Programmable Flat Orient[2]—
ControllerSun Sparc Station V, Application SW Ver. 4.3.2, Auto Start-Up & Computer Monitoring[2]—
Pump / CryogenicsSource Pump: TMP; Beam Pump: TMP (2) and Cryo Pump (8" Torr, Non On-board); End Station Pump: 2 Cryo Pump (8" Torr, Non On-Board); Cryo Compressor: CTI 8500; Remote Disk Chiller[2]—
Gas ConfigurationAsH3 - SDS, PH3 - SDS, BF3 - SDS, Ar - HP[2]—
Energy Filter System OptionYes[2]—
Vintage1999 (Backside)[1]—
Source PumpTMP[2]—
Beam PumpTMP (2)[2]—
End Station Pump2 Cryo Pump (8" Torr, Non On-Board)[2]—
Cryo CompressorCTI 8500[2]—
Type—ESC Platen ADV-S Type[3]
Category—Ion Implantation[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]Equipment inventory listing
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com