Comparison ledger
Canon PLA 500 FA Mask, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PLA 500 FA MaskCanon | 1505 G 6 ENikon |
|---|---|---|
| OEM | Canon | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon PLA 500 FA Mask | Nikon 1505 |
| Specifications | ||
| Configuration | — | 5" reticle[1] |
| Resolution | — | 650 nm[2] |
| Numerical Aperture | — | 0.54[2] |
| Reduction | — | 5x[2] |
| Exposure Field | — | 15 x 15 mm[2] |
| Alignment Accuracy | — | 130 nm[2] |
| Wafer Size | — | 4 inch[1] |
| Light Source | — | g-line[3] |
| Introduction Year | — | 1988[2] |
| NA (Numerical Aperture) | — | 0.54[2] |
| Make | — | Nikon[1] |
| Model | — | 1505 G 6 E[1] |
| Category | — | Stepper[1] |
| Wafer Sizes | — | 4 inch[1] |
| Exposure type | — | g-line[2] |
| NA | — | 0.54[2] |
| Exposure field | — | 9.3 x 18.8 mm[2] |
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