Comparison ledger
CEE 100, Heidelberg Instruments DWL66, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | DWL66Heidelberg Instruments |
|---|---|---|
| OEM | CEE | Heidelberg Instruments |
| Category | Lithography | Lithography |
| Wafer size | 6" | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | Heidelberg Instruments DWL66 |
| Cited variants |
|
|
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[3] | — |
| Programmable programs | 10 programs[3] | — |
| Steps per program | up to 10 steps[3] | — |
| Programmable step parameters | Acceleration, Speed, Time[3] | — |
| Associated document | CEE Model 100CB Spinner.doc[3] | — |
| Wafer size | Up to 6 inches[3] | — |
| Programs | 10 programs each with up to 10 steps[3] | — |
| Control parameters | Acceleration, Speed, Time[3] | — |
| Resolution | — | 40 nm, 100 nm, 200 nm, 400 nm[4] |
| Minimum feature | — | 0.5 µm[4] |
| Laser sources | — | 244 nm, 363 nm, 413 nm, 442 nm[4] |
| Substrates | — | glass, silicon or any other flat materials[4] |
| Exposure | — | photoresist[4] |
| Image size | — | 140 mm x 140 mm[4] |
| Substrate size | — | up to 200 mm by 200 mm[2] |
Plan your fab
Building a Lithography process? Get a complete equipment list.
Open the fab equipment planner →