Waferpedia

Comparison ledger

2100 sD advanced iversusEsec 2009 fS E

Esec 2100 sD advanced i, Esec Esec 2009 fS E, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMEsecEsec
CategoryPackaging & BondingPackaging & Bonding
Wafer size4"4"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation3rd generation—
FamilyEsec 2100 sD advanced iEsec Esec 2009 fS E
Specifications
Bonding methodEpoxy[1]—
Cycle time120 ms with Liquid Cooling option[1]—
Bonding accuracy20 µm @ 3σ (15 µm option)[1]—
Wafer size4" to 12" (on 8" or 12" wafer frames)[1]up to 8"[3]
Die size0.25 mm (with Small Die Kit) to 20 mm[1]0.4 x 0.4 mm - 11 x 11 mm / 16 x 16 mils - 430 x 430 mils[3]
Leadframe sizeLength: 90 to 300 mm; Width: 23 to 100 mm[1]—
Machine dimensions1785 x 1448 x 1400 mm (W x D x H)[1]—
Product family listing—Listed among Esec die bonding products[1]
Product type—Soft solder die bonder[2]
Pick & place concept—Point-to-line pick & place with stationary indexer[3]
Net productivity—2,500 to 8,000 UPH typical[3]
Temperature control—8 zones, up to 450°C, ±5°C[3]
Frame size—6", 8"[3]
Substrate and carrier size—Max length 285 mm; max width 60 mm[3]
Die placement accuracy—± 80 µm / 0.6° (3σ)[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com
  2. [2]besi.combesi.com
  3. [3]micro-power.com.hkmicro-power.com.hk