Comparison ledger
Heidelberg Instruments MLA150, SUSS MicroTec MA / BA Gen4 Pro Series, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | MLA150Heidelberg Instruments | MA / BA Gen4 Pro SeriesSUSS MicroTec |
|---|---|---|
| OEM | Heidelberg Instruments | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | Gen4 |
| Family | Heidelberg Instruments MLA150 | SUSS MicroTec MA / BA Gen4 Pro Series |
| Cited variants |
| |
| Specifications | ||
| OEM | Heidelberg Instruments GmbH[1] | — |
| Machine type | Mask-Less Aligner[1] | — |
| Light source | 405 nm or 375 nm laser diodes[1] | — |
| Exposure area | 150 x 150 mm[1] | — |
| Top-side alignment | Yes[1] | — |
| Backside alignment | Yes[1] | — |
| Real-time autofocus | Yes[1] | — |
| Layout input formats | .gds, .cif, .dxf[1] | — |
| Minimum feature size | about 1 um[1] | — |
| Minimum substrate size | 5 x 5 x 0.1 mm[1] | — |
| Maximum substrate size | 220 x 220 x 8 mm; 200 x 200 x 12 mm[1] | — |
| Substrate capacity | up to 8" x 8"[3] | — |
| Exposure time at maximum write speed | 9 minutes for 100 x 100 mm2; 16 minutes for 150 x 150 mm2[3] | — |
| Alignment accuracy | 500 nm[3] | — |
| Maximum substrate size (MLA150-1) | 220 x 220 x 8 mm[1] | — |
| Maximum substrate size (MLA150-2) | 200 x 200 x 12 mm[1] | — |
| Minimum feature size (source1) | 1 µm[1] | — |
| Minimum feature size (source2) | 600 nm[3] | — |
| Uniformity | < 120 nm[1] | — |
| Front-side alignment accuracy | < 500 nm[1] | — |
| Back-side alignment accuracy (MLA150-2) | < 1000 nm[1] | — |
| Maximum exposure area | 150 x 150 mm[1] | — |
| 405 nm laser power | 8000 mW[1] | — |
| 375 nm laser power (MLA150-1) | 2800 mW[1] | — |
| 375 nm laser power (MLA150-2) | 7200 mW[1] | — |
| Writing time with 405 nm laser (100 mm wafer, Fast mode) | < 9 min[1] | — |
| Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-1) | < 32 min[1] | — |
| Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-2) | < 9 min[1] | — |
| Exposure time for 100x100 mm² (max write speed) | 9 min[3] | — |
| Exposure time for 150x150 mm² (max write speed) | 16 min[3] | — |
| Substrate size (source2) | Up to 8" x 8"[3] | — |
| Laser wavelengths | 405 nm and 375 nm[3] | — |
| Exposure method | Non-contact[3] | — |
| Data input formats | Multiple standards (e.g., GDS, CIF, DXF)[1] | — |
| Autofocus | Real time, pneumatic[1] | — |
| Environment control | Temperature stabilization, charcoal filters[1] | — |
| Laser power (405 nm) | 8000 mW[1] | — |
| Laser power (375 nm) - MLA150-1 | 2800 mW[1] | — |
| Laser power (375 nm) - MLA150-2 | 7200 mW[1] | — |
| Write time (100 mm wafer, 405 nm fast mode) | < 9 min[1] | — |
| Write time (100 mm wafer, 375 nm fast mode) - MLA150-1 | < 32 min[1] | — |
| Write time (100 mm wafer, 375 nm fast mode) - MLA150-2 | < 9 min[1] | — |
| Write time (150 x 150 mm) | 16 minutes[3] | — |
| Write time (100 mm wafer typical) | about 30min[5] | — |
| Write time (50 mm x 50 mm) | approx. 4 mins[4] | — |
| Linewidth variation (stitching) | ≤100nm[5] | — |
| Write grid (address unit) - High Quality | 40 nm[5] | — |
| Write grid (address unit) - Fast Mode | 100 nm[5] | — |
| Grayscale capability | 8-bit grayscale bitmap or layer-structured DXF[5] | — |
| High aspect ratio mode | Available (reduced NA for thick resists >100µm)[1] | — |
| Substrate thickness maximum | 8 mm (MLA150-1); 12 mm (MLA150-2)[1] | — |
| Model | MLA150[1] | — |
| Type | Mask-less aligner[1] | Semi-automated system[2] |
| Exposure source | 405 nm or 375 nm laser diodes[1] | — |
| Alignment | Top-side and back-side alignment[1] | — |
| Substrate size | Up to 8" x 8"[3] | — |
| Tool type | Mask-less aligner[1] | — |
| Backside alignment accuracy | < 1000 nm[1] | — |
| Direct-write exposure | Exposes the design directly onto a wafer without a photomask[3] | — |
| Wafer size | — | up to 150 mm / 200 mm[2] |
| Mask alignment | — | Yes[2] |
| Bond alignment | — | Yes[2] |
| Exposure | — | Yes[2] |
| UV bonding | — | Yes[2] |
| Fusion bonding | — | Yes[2] |
| Micro- and nanoimprinting | — | Yes[2] |
| Selective plasma activation | — | Yes[2] |
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