Comparison ledger
Lam Research 490, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 490Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 490 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Tool type | Auto Etcher[1] | — |
| Process type | Plasma etcher[2] | — |
| Wafer size | 4"~6"[2] | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
| Wafer size range | 3-inch to 6-inch wafers[3] | — |
| Wafer handling | Cassette-to-cassette automatic wafer handling[2] | — |
| Processing mode | Single-wafer processing[3] | — |
| Load lock | Vacuum load locked[3] | — |
| Control | Fully automated microprocessor control[3] | — |
| Electrode spacing | Programmable, variable electrode spacing[3] | — |
| Endpoint detection | Included[3] | — |
| Wafer size (typical) | 4"~6"[2] | — |
| Chamber architecture | Double airlock structure, vacuum load locked[2] | — |
| RF generator | Included[2] | — |
| Process gas control | Multiple process gas lines with MFC control[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
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