Comparison ledger
Lam Research Concept One 150, Lam Research Concept One 150 PECVD-TEOS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Concept One 150Lam Research | Concept One 150 PECVD-TEOSLam Research |
|---|---|---|
| OEM | Lam Research | Lam Research |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Concept One 150 | Lam Research Concept One 150 |
| Specifications | ||
| Configuration | TEOS[1] | Si 02 / TEOS[5] |
| Frame Type | C1-150[3] | — |
| Process Types | SiO2, SiN, Nitride[3] | — |
| Chamber | Dielectric[3] | — |
| Cassette Platform | C1 150mm[3] | — |
| Front, Side Monitors | LCD[3] | — |
| Wafer Size | 6 inch[1] | 6 inch[5] |
| Process Type (SiO2) | SiO2[3] | — |
| Process Type (SiN) | SiN[3] | — |
| Process Type (Nitride) | Nitride[3] | — |
| Chamber Type (Dielectric) | Dielectric[3] | — |
| Chamber Type (Tungsten) | Tungsten[3] | — |
| Robot | Single Arm[3] | — |
| Monitor Type | LCD[3] | — |
| Communication | SECS / GEMS[3] | — |
| Micro Contamination Option | Yes[3] | — |
| Heated Valves | Yes[3] | — |
| Monitors | Front and side LCD[3] | — |
| Interface | SECS/GEMS[3] | — |
| Phase | — | 3 Phase[5] |
| Voltage | — | 208 Vac[5] |
| Process | — | PECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[5] |
| Current | — | 100 Current[5] |
| Deposition Material | — | Si 02 / TEOS (Silicon Dioxide / Tetraethyl Orthosilicate)[5] |
Plan your fab
Building a Deposition process? Get a complete equipment list.
Open the fab equipment planner →