Waferpedia

Comparison ledger

1 DP 41versus6 EC CMP Wafer

Logitech 1 DP 41, Strasbaugh 6 EC CMP Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1 DP 41Logitech
6 EC CMP WaferStrasbaugh
OEMLogitechStrasbaugh
CategoryCMPCMP
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLogitech 1 DP 41Strasbaugh 6 EC CMP Wafer
Specifications
Phase3 Phase[1]—
Configuration50/60 Hz[1]—
Voltage480 V[1]—
MakeLogitech[1]Strasbaugh[2]
Model1 DP 41[1]6 EC CMP[2]
Frequency50/60 Hz[1]—
Current12 amps[1]—
System type—CMP Wafer Polisher[2]
System description—Economical tool for CMP research, failure analysis, and low-volume production[3]
Operation—Semi-automatic[3]
GUI—Color, touch-screen GUI[3]
Table and spindle motors—Closed-loop table and spindle RPM motors[3]
Pad conditioning—Programmable pad conditioning[3]
Programmable control zones—20 zones[3]
Programmable control parameters—Dwell time, down force, and RPM[3]
Pad conditioning media—Diamond plated disk or nylon brush[3]
Option—ViPRR carriers[3]
Asset #—73620[2]
Operating mode—semi-automatic[3]
User interface—color, touch-screen GUI[3]
Process control zones—20 zones of programmable control[3]
Facility utility requirements—DI Water: 30 psi minimum, 1.5 GPM flow rate; Vacuum: 25" HG; Air: 100 psi, 5 SCFM; Electrical: 208 or 230 VAC, 3 phase, 60 Hz, 20 AMPS with conditioner, 30 AMPS; Exhaust: approx. 100 CFM[3]
Pad conditioning tools—diamond plated disk or nylon brush[3]
Options—ViPRR carriers[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]Equipment inventory listing
  3. [3]s3-alliance.coms3-alliance.com