Comparison ledger
Nikon NSR SF 100 i-Line, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NSR SF 100 i-LineNikon | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | Nikon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon NSR | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Configuration | 6" reticle[1] | — |
| Resolution | 0.4um or less[1] | — |
| N.A. | 0.5[1] | — |
| Exposed light source | i-line (wavelength = 365nm)[1] | — |
| Exposure range | 25x33mm[1] | — |
| Alignment accuracy | 45nm or less (M + 3 sigma)[1] | — |
| Throughput | 120 wafers / hour (200mm wafer), 80 wafers / hour (300mm wafer, approximately)[1] | — |
| Reduction ratio | 1:4[2] | — |
| Exposure field | 25 x 33 mm[2] | — |
| Throughput (200 mm wafer) | 120 wafers/hour or more[2] | — |
| 300 mm configuration | Field-upgradable to a fully compliant 300 mm configuration[2] | — |
| Numerical aperture (N.A.) | 0.5[1] | — |
| Wafer sizes | 8 inch[1] | — |
| Throughput (300 mm wafer) | 80 wafers/hour (approximately)[1] | — |
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