Comparison ledger
Oxford Instruments Plasmalab-80plus-Cloey-S, Tegal 6540, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab-80plus-Cloey-SOxford Instruments | 6540Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab-80plus-Cloey-S | Tegal 6540 |
| Cited variants | — |
|
| Specifications | ||
| Process gases | BCl3, Cl2, N2, CF4, O2, Ar[2] | — |
| Use | Etching of compound semiconductors and metals[2] | — |
| Allowed masks | Photoresist and dielectrics[2] | — |
| Platen size | 238 mm[2] | — |
| Power range | < 270 Watts[2] | — |
| MFC flow range - BCl3 | 0 – 100 sccm[2] | — |
| MFC flow range - Cl2 | 0 – 50 sccm[2] | — |
| MFC flow range - CF4 | 0 – 100 sccm[2] | — |
| MFC flow range - O2 | 0 – 50 sccm[2] | — |
| MFC flow range - Ar | 0 – 100 sccm[2] | — |
| MFC flow range - N2 | 0 – 100 sccm[2] | — |
| Pressure range | < 250 mTorr[2] | — |
| Type | — | high-density plasma etch system[3] |
| Reactor | — | HRe reactor / HRe™ reactor[3] |
| Plasma technology | — | dual-frequency RF power technology / dual-frequency RF power application[3] |
| Plasma confinement | — | magnetic plasma confinement[3] |
| Wafer size | — | 100mm – 200mm[1] |
| Optimized design rule | — | down to 0.13 micron[3] |
| RF power | — | dual-frequency RF power application[1] |
| Design rule | — | optimized for device design rules down to 90nm[1] |
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