Comparison ledger
Oxford Instruments Plasmalab80, Tegal 1511e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab80Oxford Instruments | 1511eTegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | up to 8-inch diameter wafers | three- to six-inch wafers |
| Process node | — | — |
| Introduced | — | 1984 |
| Production run | — | 1984– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab80 | Tegal 1511e |
| Specifications | ||
| Etch and deposition capabilities | Combined etch and deposition tool[1] | — |
| Etch processes | Bosch (gas chopping) or cryo processes[1] | — |
| Deposition materials | Silicon dioxide, silicon nitride, or mixed oxynitrides[1] | — |
| Wafer diameter | Up to 8-inch wafers[1] | — |
| Active etch/deposition region | Center 4 inches of the chamber[1] | — |
| Available gases | N2, N2O, O2, SF6, Ar (max flow 100 sccm); C4F8, SiH4, CH4 (max flow 20 sccm)[1] | — |
| Power | 300 W RF and 300 W ICP[1] | — |
| Process pressure | 4 to 100 mTorr[1] | — |
| Substrate temperature | -150 to 200 C[1] | — |
| tool type | — | tri-electrode dual-frequency plasma etch system[2] |
| wafer size | — | three- to six-inch wafers[2] |
| first sold | — | 1984[2] |
| system characteristic | — | first vacuum-loadlocked dual-frequency tri-electrode etch system[2] |
| First vacuum-loadlocked dual-frequency tri-electrode etch system | — | Yes[2] |
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