Waferpedia

Comparison ledger

ACP28Gversus310

Pfeiffer ACP28G, STS 310, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
ACP28GPfeiffer
310STS
OEMPfeifferSTS
CategoryDepositionDeposition
Wafer size100mm100mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyPfeiffer ACP28GSTS 310
Specifications
Pump typeDry pump[1]—
RoleLoadlock primary pump[1]—
ManufacturerPfeiffer[1]—
Contextual systemEVA 451 evaporator[1]—
Intended applicationPumping traces of corrosive gas[2]—
Pumping mechanismFrictionless multi-stage roots design[2]—
Voltage range90 to 254 VAC at 50 or 60 Hz[2]—
Overhaul interval22,000 hours[2]—
Tool type—plasma-enhanced chemical-vapor-deposition (PECVD) system[3]
Wafer size—100-mm-diameter silicon wafers[3]
Deposition material—silicon dioxide[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]idealspectroscopy.comidealspectroscopy.com
  3. [3]nanocenter.umd.edunanocenter.umd.edu