Comparison ledger
Plasma-Therm 790 RIE-PECVD, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 790 RIE-PECVDPlasma-Therm | 1512eTegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Unaxis 790 | Tegal 1512e |
| Specifications | ||
| Configuration | Single Chamber[1] | — |
| Right chamber | CHF3 (54sccm), O2 (20sccm), H2 (20sccm), Ar (50sccm)[2] | — |
| Left chamber | Cl2 (20sccm), HBr (100sccm),[2] | — |
| Compatible Materials | Si (to etch with Cr mask, use the ORANGE RIE batchtop), TMDs, and Graphene[2] | — |
| Incompatible Materials | III-V / Hi K / Metal[2] | — |
| Voltage | 208V, 3 Phase[4] | — |
| Wafer sizes | 2, 3, 4, 5, 6, 8, 12 inch[2] | — |
| Chamber configuration | Single chamber[1] | — |
| Process gas supply (right chamber) | CHF3 (54sccm), O2 (20sccm), H2 (20sccm), Ar (50sccm)[2] | — |
| Process gas supply (left chamber) | Cl2 (20sccm), HBr (100sccm), O2 (20sccm), CF4 (50sccm), He (100sccm)[2] | — |
| Turbo pump base pressure | 10-5 Torr[2] | — |
| RF frequency | 13.56 MHz[3] | — |
| Electrical input | 200-220 Vac[3] | — |
| Number of process gases | 6[3] | — |
| Feature plate | Blank anodized aluminum[3] | — |
| Turbo pump capacity | 360 lps[3] | — |
| Electrode size | Dual 11 inch[4] | — |
| Voltage/phase | 208V, 3 phase[4] | — |
| Compatible materials | Si (with Cr mask), TMDs, Graphene[2] | — |
| Tool type | — | Industrial RIE plasma etcher system[8] |
| Stated configuration | — | With modules assembly for CI-4222[8] |
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