Comparison ledger
SUSS MicroTec ACS200, Tokyo Electron CleanTrack ACT 8, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ACS200SUSS MicroTec | CleanTrack ACT 8Tokyo Electron |
|---|---|---|
| OEM | SUSS MicroTec | Tokyo Electron |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | — | DUV lithography |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | i-line | — |
| Family | SUSS MicroTec ACS200 | Tokyo Electron CleanTrack ACT 8 |
| Specifications | ||
| Tool type | Modular cluster tool[1] | — |
| Process | Coating and development of i-line photoresists[1] | — |
| Loading/unloading ports | Two loading/unloading ports: one cassette for coating and one cassette for development[1] | — |
| Wafer centering | Wafer centering station[1] | — |
| Spin-coating modules | Two spin-coating modules[1] | — |
| Development module | One development module with puddle and spray options[1] | — |
| Hotplates and coolplates | Two stacks of hotplates (9 in total) and coolplates (3 in total)[1] | — |
| HMDS priming | Additional HMDS-priming module[1] | — |
| Wafer handling | Standard SEMI-wafers of 100 mm and 150 mm diameter[1] | — |
| Supported wafer materials | Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[1] | — |
| Photoresists available | AZ ECI 3007, AZ ECI 3027, AZ 10XT-20, AZ 10XT-60, AZ 15nXT, AZ 40XT[1] | — |
| Wafer diameter supported | 100mm and 150mm (on request)[1] | — |
| Wafer types | Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[1] | — |
| Number of spin-coating modules | 2[1] | — |
| Number of development modules | 1[1] | — |
| Number of hotplates | 9 (total across two stacks)[1] | — |
| Number of coolplates | 3[1] | — |
| HMDS priming module | Yes (included)[1] | — |
| Robot model | Sankyo SC5000[1] | — |
| Photoresist type | i-line[1] | — |
| Voltage | 400 V[2] | — |
| Phase | 3 Phase[2] | — |
| Frequency | 60 Hz[2] | — |
| Thermal modules | Two stacks of hotplates (9 in total) and coolplates (3 in total), including an additional HMDS-priming module[1] | — |
| Wafer material | Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[1] | — |
| Central robot | Individual processing modules are fed by a central robot[1] | — |
| Robot | central robot feeding the individual processing modules[1] | — |
| Supported wafer diameters | 100 mm and 150 mm diameter[1] | — |
| Equipment type | — | Industry-standard wafer coater and developer[3] |
| Lithography mode | — | DUV lithography[3] |
| Exposure interface | — | In-line exposure unit interface[3] |
| Throughput / footprint | — | High throughput in a small footprint[3] |
| Cluster configuration | — | Coater and developer track in-line with an ASML PAS5500/350C stepper[3] |
| Configured wafer size | — | 100 mm (4") wafers[3] |
| Convertible wafer size | — | 150 mm (6") wafers[3] |
| Process materials | — | KrF photoresist and ancillary anti-reflective coatings[3] |
| Track blocks | — | Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[3] |
| Wafer size | — | 100 mm (4 inch) standard, convertible to 150 mm (6 inch) on demand[3] |
| Lithography type | — | DUV (KrF)[3] |
| In-line stepper interface | — | ASML PAS5500/350C[3] |
| Cassette ports | — | Four (two for 100 mm, two for 150 mm)[3] |
| Resist pump lines | — | 4 for photoresist (COT), 2 for BARC (BCT)[3] |
| Developer lines | — | 2 pressure-driven lines[3] |
| BARC materials supported | — | DS-K101 (Brewer Science), DUV-42P[3] |
| Photoresists supported | — | M108Y (JSR Corporation, 0.18 μm), M35G (0.25 μm)[3] |
| Developer used | — | TMA238WA[3] |
| Solvent used | — | Microposit EC Solvent (Dupont)[3] |
| Temperature/humidity control | — | Internal laminar flow with regulated temperature, humidity, and cup temperature/humidity controller (T&H)[3] |
| Water Flow | — | Left to Right[4] |
| Software Version | — | 1.18.003[5] |
| CIM | — | SECS[5] |
| Handler System | — | CRA, PRA (2)[5] |
| Factory Interface | — | SMIF (3)[5] |
| Coater/Developer | — | Wafer coater and developer[3] |
| Configuration | — | In-line with ASML PAS5500/350C stepper forming a DUV lithography cluster[3] |
| Wafer Size (Configured) | — | 100 mm (4")[3] |
| Wafer Size (Conversion Possible) | — | 150 mm (6") - rare and on-demand[3] |
| Main Blocks | — | Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[3] |
| Spinning Units | — | Bottom-layer Coater (BCT), Coater (COT), Developer (DEV)[3] |
| Thermal Plates | — | Low-temperature Hot Plate, High-temperature Hot Plate, High-speed Chill Plate, ADHesion plates, Precision Hot Plates, Transition Station, Transition Chill Plate[3] |
| Interface Buffer | — | 25-slot buffer[3] |
| Photoresist | — | KrF photoresist (M108Y, M35G)[3] |
| BARC | — | DS-K101 and DUV-42P[3] |
| Developer | — | TMA238WA[3] |
| External Modules | — | AC Power Box, Chemical Cabinet, Temperature and Humidity Controller, Thermostatic Water Supply[3] |
| In-line exposure unit | — | ASML PAS5500/350C[3] |
| Wafer capacity (cassette ports) | — | 4[3] |
| BARC types | — | DS-K101 (Brewer Science) and DUV42P[3] |
| Photoresist types | — | M108Y (JSR Corporation) and M35G[3] |
| Exposure unit interface | — | in-line exposure unit interface[3] |
| Chemical filters | — | ULPA chemical filters[3] |
| Ovens | — | high-precision ovens[3] |
| Conversion wafer size | — | 150 mm (6") wafers[3] |
| Photoresist chemistry | — | KrF photoresist[3] |
| Ancillary coating | — | AntiReflective Coatings[3] |
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