Comparison ledger
Tegal 6540, Tegal 6550, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6540Tegal | 6550Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | down to 90nm | — |
| Introduced | — | 2000 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2000 Patent announcement · 2001 Order announced |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6540 | Tegal 6550 |
| Cited variants |
|
|
| Specifications | ||
| Type | high-density plasma etch system[3] | plasma etch reactor[5] |
| Reactor | HRe reactor / HRe™ reactor[3] | — |
| Plasma technology | dual-frequency RF power technology / dual-frequency RF power application[3] | — |
| Plasma confinement | magnetic plasma confinement[3] | — |
| Wafer size | 100mm – 200mm[1] | 100mm–200mm[2] |
| Optimized design rule | down to 0.13 micron[3] | — |
| RF power | dual-frequency RF power application[1] | — |
| Design rule | optimized for device design rules down to 90nm[1] | — |
| Product type | — | etch reactor / plasma etch system[5] |
| Process target | — | non-volatile metal and metal oxide films[5] |
| Primary application | — | volume production of magnetic memory components such as MRAM and GMR devices[5] |
| Platform | — | full cluster tool technology[5] |
| Process capability | — | patented rinse-strip-rinse feature / process capability[5] |
| Chamber configuration | — | dual-chamber platform[6] |
| Plasma source | — | patented next-generation dual-frequency plasma source technology[5] |
| Plasma source (later material) | — | Spectra plasma source[6] |
| Available option | — | deposition shield[5] |
| Processes | — | etching non-volatile metal and metal oxide films[5] |
| Plasma source technology | — | patented next-generation, dual-frequency plasma source technology[5] |
| Variant | — | Spectra plasma source[6] |
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