Comparison ledger
Varian 160 XP, Varian 350D, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 160 XPVarian | 350DVarian |
|---|---|---|
| OEM | Varian | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | 1986 |
| Production run | — | 1986– |
| Lifecycle | — | Discontinued |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Varian 160 XP | Varian 350D |
| Cited variants |
| — |
| Specifications | ||
| Configuration (160 XP Ion variant) | 150mm High Current IMP[1] | — |
| Type | — | medium current implanter[2] |
| Relationship to 300 XP | — | industry-standard predecessor platform that the 300 XP evolved from[2] |
| Usage period | — | tool of choice during the early 1980s[2] |
| Wafer sizes | — | 4 inch and 6 inch[3] |
| Implant species | — | Boron (B11 or BF2) and Phosphorus (P31)[3] |
| Energy range | — | 10 keV to 200 keV[3] |
| Dose range | — | 1E12 to 5E15 ions/cm²[3] |
| End stations | — | Independent dual end stations[2] |
| Wafer handling | — | Vertical, edge-only wafer handling[2] |
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