Comparison ledger
ABM -407B-1-S-CES293 Robot, Lam Research Gasonics L 3510, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Gasonics L 3510Lam Research | |
|---|---|---|
| OEM | ABM | Lam Research |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-1-S-CES293 Robot | Lam Research Gasonics |
| Specifications | ||
| Model | ABM-407B-1-S-CES293[1] | L 3510[2] |
| Description | ROBOT[1] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1] | — |
| Configuration | — | With:[2] |
| Microwave Power | — | 0–1200 watts at 2.45 GHz[3] |
| Pressure Range | — | 0.5 to >5.0 torr[3] |
| Platen Temperature | — | 100–300 °C[3] |
| Ash Rate | — | Up to 3.5 µm/min (process dependent)[3] |
| Throughput | — | 45–60 wafers per hour[3] |
| Within Wafer Uniformity | — | ±5% to 10% (process dependent)[3] |
| Wafer-to-Wafer Uniformity | — | ±5% to 10% (process dependent)[3] |
| Process Gases | — | O₂, N₂ (O₂ 5 SLM, N₂ 1 SLM typical)[3] |
| Wafer Size | — | 75 mm to 200 mm (3 to 8 inch)[4] |
| OEM | — | Lam Research / Gasonics[2] |
| Type | — | Plasma asher[2] |
| Process type | — | Downstream microwave plasma ashing[4] |
| Wafer size support | — | 75 mm to 200 mm (3 to 8 inch); up to 8 inch capability[4] |
| Wafer handling | — | Z-Bot for 6" and 8" wafers[2] |
| Gas delivery | — | Accurate 354 C Gas Control System[2] |
| Vacuum pump | — | Abara A 70 W Dry Pump[2] |
| Process gases | — | O2, N2[4] |
| Ash rate | — | Up to 3.5 µm/min[4] |
| Wafer transfer | — | Integrated solid robotic wafer transfer[3] |
| Cassette station | — | Fixed, more stable[3] |
| Controller | — | Allwin21 PC with touch screen monitor[3] |
| Wafer Size Support | — | 75 mm to 200 mm (3 to 8 inch)[3] |
| Wafer Handling | — | Z-Bot for 6" and 8" wafers; integrated solid robotic transfer[2] |
| Gas Control System | — | Accurate 354 C Gas Control System[2] |