Comparison ledger
Advantest F 5112 E-Beam Lithography, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | F 5112 E-Beam LithographyAdvantest | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | Advantest | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Advantest F 5112 E-Beam Lithography | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Accelaration voltage | 50 kV[1] | — |
| Field size | 1600 μm x800 μm[1] | — |
| Beam current | 3.5 μA[1] | — |
| Beam size | 4 μm x4 μm variable shaped beam[1] | — |
| Scanning speed | 8 MHz[1] | — |
| Stitching accuracy | 45 nm[1] | — |
| Overlay accuracy | 45 nm[1] | — |
| Configuration | 50/60 Hz[2] | — |
| Acceleration voltage | 50 kV[1] | — |
| Wafer size | 3 inch[1] | — |
| Minimum feature size | 100 nm[3] | — |
| CD variation | 3 sigma <= 15 nm[3] | — |
| Exposure method | Block exposure[3] | — |
| Maximum number of block patterns | 70[3] | — |
| Power frequency | 50/60 Hz[2] | — |
| Model | F 5112[1] | — |
| Max. no. of block patterns | 70[3] | — |
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