Comparison ledger
Aixtron G 5 Plus, Applied Materials 0020 18455 Part, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | G 5 PlusAixtron | 0020 18455 PartApplied Materials |
|---|---|---|
| OEM | Aixtron | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron G 5 Plus | Applied Materials 0020 18455 Part |
| Specifications | ||
| Configuration | GaN Epitaxy 6"/8" Bridge[1] | Shaft,Rf In Local Match, Hdpcvd,Rev3[4] |
| H2 | 300slm[1] | — |
| NH3 | 100 slm[1] | — |
| C2H4 | 5 slm[1] | — |
| Cl2 | 3slm[1] | — |
| Operating pressure inside system | max. 6barg[1] | — |
| Wafer sizes | 6, 8 inch[1] | — |
| Operating pressure (max) | 6 barg[1] | — |
| H2 flow (max) | 300 slm[1] | — |
| NH3 flow (max) | 100 slm[1] | — |
| SiH4/H2 (≤2%) flow | 5 slm[1] | — |
| C2H4 flow | 5 slm[1] | — |
| Cl2 flow | 3 slm[1] | — |
| Reactor type | Planetary reactor module[2] | — |
| Substrate sizes | 150 mm, 200 mm[2] | — |
| Configurations | 8x150 mm, 5x200 mm[2] | — |
| In-situ cleaning | Cl2 in-situ cleaning[2] | — |
| Wafer handler | cassette-to-cassette[2] | — |
| Substrate types | Si, Sapphire, SiC[3] | — |
| Process module voltage | 208 VAC[3] | — |
| RF generator voltage | 480 VAC[3] | — |
| Exhaust | Single filter exhaust CT500[3] | — |
| Process pump | Ebara ESA80[3] | — |
| Mass flow controllers | Horiba MFC's[3] | — |
| Software version | Aixact 7.1.2.8[3] | — |
| Injector | Penta Injector[3] | — |
| Control system | EpiTT version 1[3] | — |
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