Waferpedia

Comparison ledger

PAS 5500 300 Cversus100

ASML PAS 5500 300 C, CEE 100, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100CEE
OEMASMLCEE
CategoryLithographyLithography
Wafer sizeWafer Alignment:6"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyASML PAS 5500CEE 100
Cited variants
  • PAS 5500/300CDUV[1]
Specifications
S/W Ver8.9.0[3]—
PC TypeLIPC (Linnux PC)[3]—
Disk Drive2 disc RAID system[3]—
ConfigurationProjection:[3]—
Wafer Stage TypeAir Bearing Exposure Stage 200mm, SiSiC Wafer Table (Can be set up to run 125-200mm wafers)[3]—
Field Size31.1mm Diameter, 22x27.4 Field Size[3]—
Reticle AlignmentTTL Dual Beam Alignment[3]—
Wafer sizeWafer Alignment:[3]Up to 6 inches[4]
ModelPAS 5500 / 300 C[3]—
Illumination sourceCymer ELS 5610[3]—
Wavelength248 nm[3]—
Wafer alignmentATHENA+TIS 3X0 (Off Axis Alignment System)[3]—
Projection opticsZeiss DUV 4X Double Telecentric[3]—
Numerical aperture0.57-0.4[3]—
Resolution<0.25 um[3]—
Levelling/autofocusTwo measurement systems: coarse red measurement system (820 nm) and fine white measurement system (725-1050 nm)[3]—
Wafer loaderSEMI Standard, 2x Cassette Wafer Transport System, 2x Track Interface Ports[3]—
Control rack positionOCU Mark V-LHS[3]—
Reticle loaderARMS - 3 Reticle Libraries (SMIF Ports)[3]—
Image SensorIQC for fast automated verification of Focus and Overlay[3]—
Barcode Readeryes[3]—
Tool type—Spray Developer[2]
Accepts wafer size—up to 6" wafers[4]
Programmable programs—10 programs[4]
Steps per program—up to 10 steps[4]
Programmable step parameters—Acceleration, Speed, Time[4]
Associated document—CEE Model 100CB Spinner.doc[4]
Programs—10 programs each with up to 10 steps[4]
Control parameters—Acceleration, Speed, Time[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  3. [3]inventory listing
  4. [4]nanofab.utah.edunanofab.utah.edu