Waferpedia

Comparison ledger

B2versusEVG 150

Brewer Science B2, EV Group EVG 150, side by side. Every value shown is drawn from the cited encyclopedia entries.

LinkedIn X Email
Side-by-side comparison of selected equipment models
Attribute
B2Brewer Science
EVG 150EV Group
OEMBrewer ScienceEV Group
CategoryLithographyLithography
Wafer size100mm100mm
Process nodeDUV—
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation—i-line
FamilyBrewer Science B2EV Group EVG 150
Specifications
TypeDevelopable BARC[1]—
Name in ACT-8 process listB2 DUV42P[1]—
Configured wafer size on ACT-8100 mm (4") wafers[1]—
Wafer size100 mm (4")[1]100mm and 150mm[3]
Process node / eraDUV[2]—
CategoryLithography[2]—
Tool type—Modular cluster tool for coating and development of i-line photoresists[3]
Loading/unloading ports—Two loading/unloading ports: one cassette for coating and one cassette for development[3]
Wafer centering—Optical wafer centering station[3]
Spin-coating modules—Three spin-coating modules: coater A, coater B, and coater C[3]
Coater A use—Low-viscosity photoresist[3]
Coater B use—High-viscosity photoresist[3]
Coater C use—Bottom layers[3]
Development module—One development module with puddle and spray options[3]
Hotplates and coolplates—Three stacks of hotplates (8 in total) and coolplates (3 in total)[3]
HMDS priming—Additional HMDS-priming module[3]
Robot—Dual end effector robot[3]
Wafer handling—Standard SEMI-wafers of 100 mm and 150 mm diameter[3]
Substrate types—Opaque wafers (silicon, SOI) or transparent wafers (glass, fused-silica, sapphire)[3]
Process stability features—Airborne molecular contamination (AMC) filter and active control of chamber and resist/developer lines temperature[3]
Available photoresists—AZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E[3]
Available bottom layers—LOR 5A, LOR 15C, XHRiC-16 II[3]
Surface preparation options—HMDS, dehydrate, or none[3]
Solvent clean options—Standard or edge bead removal (EBR)[3]
Developer chemistries—AZ 726 MIF, AZ 400K 1:3.5, AZ developer III[3]
wafer diameter—100mm and 150mm[3]
loading/unloading ports—Two (one cassette for coating, one for development)[3]
wafer centering station—Optical wafer centering station[3]
spin-coating modules—Three (coater A: low-viscosity PR, coater B: high-viscosity PR, coater C: bottom layers)[3]
development module—One, with both puddle and spray options[3]
hotplates—Three stacks, 8 in total[3]
coolplates—Three stacks, 3 in total[3]
additional module—HMDS-priming module[3]
wafer types—Opaque (silicon, SOI) or transparent (glass, fused-silica, sapphire)[3]
process enhancement—AMC filter and active control of chamber and resist/developer line temperature[3]
Wafer sizes—100mm and 150mm diameter[3]
Loading ports—Two loading/unloading ports[3]
Hotplates—Three stacks, 8 total[3]
Coolplates—Three total[3]
HMDS-priming module—Included[3]
Wafer types—Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[3]
AMC filter—Airborne molecular contamination filter on top[3]
Temperature control—Active control of chamber and resist/developer lines temperature[3]
Photoresists available—AZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E; bottom layers: LOR 5A, LOR 15C, XHRiC-16[3]
Photoresist type—i-line[3]
Process enhancement—Airborne molecular contamination filter and active control of chamber and resist/developer line temperature[3]
Priming module—Additional HMDS-priming module[3]
Wafer diameter—100 mm and 150 mm diameter[3]
B2 entryEVG 150 entryAsk about these tools →Share experience with this comparison →

Plan your fab

Building a Lithography process? Get a complete equipment list.

Open the fab equipment planner →
Sources (3)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]waferpedia.comwaferpedia.com
  3. [3]epfl.chepfl.ch