Waferpedia

Comparison ledger

017-0024-01 PrealignerversusSU-8

Brooks 017-0024-01 Prealigner, Laurell SU-8, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
SU-8Laurell
OEMBrooksLaurell
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyBrooks 017-0024-01 PrealignerLaurell SU-8
Specifications
Equipment name—Spin Station- Laurell- SU-8 ONLY[1]
Category—Lithography[1]
Type—Spin station[1]
Photoresist Type—SU-8 (negative epoxy photoresist)[2]
Exposure Wavelength—i-line (365 nm)[2]
Maximum Absorption—Ultraviolet light at 365 nm[2]
Film Thickness Range (single spin coat)—1 to >200 μm[3]
Maximum Film Thickness (multiple coats or dry film)—Up to above 300 μm (spun) or above 1 mm (dry film)[2]
Aspect Ratio (achieved)—>20 with solution formulation; >40 with dry resist[2]
Operational Mode—Dedicated to SU-8 only[1]
Spin Speed (recommended for reproducibility)—3000 rpm[4]
Soft Bake Temperature (typical first step)—65 °C[3]
Soft Bake Temperature (typical second step)—95 °C[3]
Post Exposure Bake Temperature (first step)—65 °C[3]
Post Exposure Bake Temperature (second step)—95 °C[3]
Hard Bake Temperature (optional)—150 °C[5]
Developer—1-methoxy-2-propanol acetate (PGMEA) or SU-8 Developer[2]
Substrate Size (example used in research)—150 mm (6-inch) silicon wafer[6]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]nanocenter.umd.edunanocenter.umd.edu
  2. [2]en.wikipedia.orgen.wikipedia.org
  3. [3]wp.optics.arizona.eduwp.optics.arizona.edu
  4. [4]cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
  5. [5]repository.upenn.edurepository.upenn.edu
  6. [6]iopscience.iop.orgiopscience.iop.org