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VPG200versusACS200

Heidelberg Instruments VPG200, SUSS MicroTec ACS200, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
VPG200Heidelberg Instruments
ACS200SUSS MicroTec
OEMHeidelberg InstrumentsSUSS MicroTec
CategoryLithographyLithography
Wafer size100mm100mm
Process node600 nm minimum resolution with thin photoresist (< 1 µm)—
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control systemLinux workstation—
Generation—i-line
FamilyHeidelberg Instruments VPG200SUSS MicroTec ACS200
Cited variants
  • VPG200 with 4 mm Write Head[1]
  • VPG200 with 10 mm Write Head[1]
  • VPG200 with 20 mm Write Head[1]
—
Specifications
Exposure source355 nm wavelength, pulsed Q-switched DPSS laser[1]—
Alignment cameras2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only)[1]—
AutofocusReal time autofocus[1]—
Stage systemPosition control with interferometers, chuck with vacuum for various substrate sizes[1]—
Supported substratesMasks and reticules (4, 5, 6, 7 inch) and wafer (100 and 150 mm SEMI-standard) cassette station[1]—
Write heads3 interchangeable optics: Write Head 4, 10, 20 mm focal length[1]—
Critical dimension0.6, 0.9 and 2.0 μm[1]—
Minimum feature size500 nm[1]—
Pattern edge roughnessXY direction dependent; max 90, 140 and 250 nm[1]—
Alignment accuracy<300, 400, 800 nm[1]—
Maximum substrate size7" x 7" square or 200 mm diameter[1]—
Maximum exposure area7" x 7" square[1]—
Design file compatibilitycif, gdsii, dxf, gerber[1]—
Writing time with handling5" x 5" square (110 x 110 mm): 7, 18, 65 min[1]—
Batch processingUp to 20 5" masks or 25 wafers[1]—
Laser wavelength355 nm (pulsed Q-switched DPSS laser)[1]—
Imaging methodProjection of two linear arrays of 1000 pixels combined with mechanical stage movement[1]—
Resolution (minimum)Approximately 600 nm with thin photoresist (< 1 µm) for 4 mm write head[1]—
Critical dimension (4 mm write head)0.6 µm[1]—
Critical dimension (10 mm write head)0.9 µm[1]—
Critical dimension (20 mm write head)2.0 µm[1]—
Pattern edge roughness (4 mm write head)max 90 nm (XY direction dependent)[1]—
Pattern edge roughness (10 mm write head)max 140 nm (XY direction dependent)[1]—
Pattern edge roughness (20 mm write head)max 250 nm (XY direction dependent)[1]—
Alignment accuracy (4 mm write head)< 300 nm (top side alignment)[1]—
Alignment accuracy (10 mm write head)< 400 nm (top side alignment)[1]—
Alignment accuracy (20 mm write head)< 800 nm (top side alignment)[1]—
Substrate handlingCassette station for masks and reticles (4, 5, 6, 7 inch) and wafers (100 and 150 mm SEMI-standard)[1]—
Optional write heads (focal length)4 mm, 10 mm, 20 mm[1]—
CAD file formatscif, gdsii, dxf, gerber[1]—
Writing time (5 inch x 5 inch square, with handling)7 min (4 mm head), 18 min (10 mm head), 65 min (20 mm head)[1]—
Image reconstructionProjection of two linear arrays of 1000 pixels combined with mechanical movement of the stage[1]—
Critical Dimension0.6, 0.9 and 2.0 μm for 4, 10, 20 mm write heads respectively[1]—
Designs compatibilitycif, gdsii, dxf, gerber[1]—
Interchangeable opticsWrite Head 4, 10, 20 mm focal length[1]—
Writing time with handling (5"x5" sq. 110x110 mm)7, 18, 65 min for 4, 10, 20 mm write heads[1]—
Alignment2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only); overlay exposure with top side alignment requires wafer flat pre-alignment with maximum tolerance of ±10 mrad[1]—
ResolutionMinimum about 600 nm with thin photoresist thickness (<1 µm)[1]—
TypeVolume Pattern Generator (laser pattern generator)[1]—
Wafer cassette support100 and 150 mm SEMI-standard wafers[1]—
Tool type—Modular cluster tool[2]
Process—Coating and development of i-line photoresists[2]
Loading/unloading ports—Two loading/unloading ports: one cassette for coating and one cassette for development[2]
Wafer centering—Wafer centering station[2]
Spin-coating modules—Two spin-coating modules[2]
Development module—One development module with puddle and spray options[2]
Hotplates and coolplates—Two stacks of hotplates (9 in total) and coolplates (3 in total)[2]
HMDS priming—Additional HMDS-priming module[2]
Wafer handling—Standard SEMI-wafers of 100 mm and 150 mm diameter[2]
Supported wafer materials—Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[2]
Photoresists available—AZ ECI 3007, AZ ECI 3027, AZ 10XT-20, AZ 10XT-60, AZ 15nXT, AZ 40XT[2]
Wafer diameter supported—100mm and 150mm (on request)[2]
Wafer types—Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[2]
Number of spin-coating modules—2[2]
Number of development modules—1[2]
Number of hotplates—9 (total across two stacks)[2]
Number of coolplates—3[2]
HMDS priming module—Yes (included)[2]
Robot model—Sankyo SC5000[2]
Photoresist type—i-line[2]
Voltage—400 V[3]
Phase—3 Phase[3]
Frequency—60 Hz[3]
Thermal modules—Two stacks of hotplates (9 in total) and coolplates (3 in total), including an additional HMDS-priming module[2]
Wafer material—Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[2]
Central robot—Individual processing modules are fed by a central robot[2]
Robot—central robot feeding the individual processing modules[2]
Supported wafer diameters—100 mm and 150 mm diameter[2]
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Sources (3)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]epfl.chepfl.ch
  3. [3]inventory listing