Waferpedia

Comparison ledger

1088versusMini Tytan 4600

Heller 1088, Tystar Mini Tytan 4600, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1088Heller
OEMHellerTystar
CategoryThermal / DiffusionThermal / Diffusion
Wafer size—50mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyHeller 1088Tystar Mini Tytan 4600
Specifications
Heating Zones8 zones (4 top and 4 below) plus 1 cooling zone[1]—
Heating MethodForced convection[1]—
Conveyor Width18 inches (45 cm)[1]—
Heated Length43.5 inches (111 cm)[1]—
Overall Length96 inches (244 cm)[1]—
Height50 inches (127 cm)[1]—
Net Weight900 lbs (409 kg)[1]—
Thermal ProfilerIncluded[1]—
Oven TopCounter balance for easy access to conveyor[1]—
Solder CompatibilityLead-free and leaded soldering[1]—
Furnace stack tubes—Four vacuum tubes in one furnace stack[2]
Atmospheric pressure tubes—Two[2]
Low-pressure tubes—Two[2]
Maximum temperature for silicon nitride—Up to 850 °C[2]
Maximum temperature for all others—Up to 650 °C[2]
Maximum deposition thickness—5 µm[2]
Low temperature oxidation—For processes of < 450 °C[2]
Mass flow system—MFS-460[2]
Data collection system—DCS-30[2]
Wafer Size—up to 150 mm (6 inch)[2]
Maximum Temperature (Silicon Nitride)—850 °C[2]
Maximum Temperature (Other Processes)—650 °C[2]
Low Temperature Oxidation Temperature—< 450 °C[2]
Number of Tubes—4 (2 atmospheric, 2 low-pressure)[2]
LPCVD Processing Status—Currently not available[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]smtdevices.comsmtdevices.com
  2. [2]pnf.uchicago.edupnf.uchicago.edu