Waferpedia

Comparison ledger

9400 SE Polyversus100 ICP Fluorine

Lam Research 9400 SE Poly, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
9400 SE PolyLam Research
100 ICP FluorineOxford Instruments
OEMLam ResearchOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 9400 SE PolyOxford Instruments 100 ICP Fluorine
Cited variants
  • Lam 9400 SE 308v[1]
—
Specifications
Voltage308v[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu