Comparison ledger
Lam Research Concept Two Speed S (A), Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Concept Two Speed S (A)Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2010 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Concept Two | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Chamber Only[1] | — |
| Voltage | 208 VAC[1] | — |
| Phase | 3 Phase[1] | — |
| Full Load | 21 A[1] | — |
| Main Breaker Rating | 25 A[1] | — |
| Largest Load | 8 A[1] | — |
| Interrupt Current | 10 KA[1] | — |
| Type | Chamber Only[1] | — |
| Vintage | 2010[1] | — |
| Frequency | 50/60 Hz[1] | — |
| Full Load Current | 21 A[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] |
| Cryo DRIE etch rate | — | up to 5 µm/min[2] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[2] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →