Comparison ledger
Lam Research SEZ 323 Spin, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SEZ 323 SpinLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | Single wafer | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research SEZ | Oxford Instruments 100 ICP Fluorine |
| Cited variants | — | |
| Specifications | ||
| Configuration | Chambers (2)[4] | — |
| Wafer Sizes | 8, 12 inch[4] | — |
| Chambers | 2[4] | — |
| Wafer sizes | 8 inch, 12 inch[4] | — |
| Number of chambers | 2[4] | — |
| OEM | Lam / SEZ[4] | — |
| Model | 323[4] | — |
| Tool type | Spin Etcher[4] | — |
| Voltage | 400 VAC[2] | — |
| Phase | 3 Phase[2] | — |
| Max. Current | 75 A[2] | — |
| Wafer size | Single wafer[2] | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
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