Comparison ledger
Lam Research TCP 9600 Metal, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | TCP 9600 MetalLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research TCP 9600 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | SMIF[1] | — |
| Supported wafer sizes | 150mm (6 inch) and 200mm[2] | — |
| Process pressure range | 0 - 100 mTorr[3] | — |
| Top electrode power | 0 - 1250 W[3] | — |
| Lower electrode power | 0 - 1200 W[3] | — |
| Process temperature | 55 °C[3] | — |
| Process gases | Cl2, BCl3, HBr, SF6, CF4, Ar, N2, O2, He[3] | — |
| Endpoint detection | Adjustable monochromator[3] | — |
| Wafer clamp | Electrostatic chuck (ESC) with helium backside cooling[4] | — |
| Electrode gap | Fixed gap 8 inch TCP coil[4] | — |
| Number of RF generators | 3 (AE RFG 1250)[4] | — |
| Power supply requirements | 208V, 80A, 3-Phase, 50/60Hz[4] | — |
| DSQ strip module | Included[3] | — |
| Software version | Envision 1.6.1-012[4] | — |
| Aluminum etch rate | > 8000 Å/min[2] | — |
| Aluminum non-uniformity | +/- 15%[2] | — |
| System uptime | Typically > 85%[2] | — |
| Mean time to change (MTTC) | 12 hours[2] | — |
| Mean time between failures (MTBF) | > 125 hours[2] | — |
| Mean time to repair (MTTR) | < 4 hours[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[6] |
| Cryo DRIE etch rate | — | up to 5 µm/min[6] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[6] |
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