Comparison ledger
memsstar Orbis Alpha, Oxford Instruments PlasmaPro80, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Orbis Alphamemsstar | PlasmaPro80Oxford Instruments |
|---|---|---|
| OEM | memsstar | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | memsstar Orbis Alpha | Oxford Instruments PlasmaPro80 |
| Cited variants | — | |
| Specifications | ||
| System type | oxide etch system[2] | — |
| Process chemistry | hydrogen fluoride etchants[2] | — |
| Footprint | small footprint[2] | — |
| Dimensions | 600 x 540 x 900 mm[2] | — |
| Control | PC controlled[2] | — |
| User interface | resistive touch screen[2] | — |
| Selectivity to silicon nitride and silicon dioxide | < 5% 1σ[2] | — |
| Uniformity | < 5% 1σ[2] | — |
| Repeatability | < 5% 1σ[2] | — |
| Endpoint capability | unique endpoint capability[2] | — |
| Substrate size range | sample sizes to 200 mm[2] | — |
| Selectivity (silicon nitride and silicon dioxide) | excellent (<5% 1σ)[2] | — |
| Uniformity and repeatability | <5% 1σ[2] | — |
| Control interface | PC controlled with resistive touch screen[2] | — |
| Endpoint detection | unique endpoint capability[2] | Laser reflectometry/interferometry end-point-detection[1] |
| Process window | large process window to optimize process for any structure[2] | — |
| OEM | — | Oxford Instruments[1] |
| Model | — | PlasmaPro80[1] |
| Tool type | — | RIE dry etcher[1] |
| Chemistry | — | fluorine chemistry[1] |
| Process gases | — | CHF3, SF6, O2, Ar[1] |
| Maximum power | — | 300 W @ 13.56 MHz[1] |
| Load system | — | Open-load system (no load lock)[1] |
| Wafer handling | — | chips to wafer up to 200mm[1] |
| Wafer size | — | 100mm wafers[1] |
| Applications | — | hBN, SiGe, graphite and graphene soft etching[1] |
| Process type | — | RIE (Reactive Ion Etching), dry etcher[1] |
| Wafer size (max) | — | 200 mm[1] |
| Loading design | — | Open loading design (quick wafer loading/unloading)[3] |
| Wafer temperature control | — | Superior wafer temperature uniformity[3] |
| Compliance standards | — | Semi S2/S8[3] |
| Maximum wafer size | — | 200 mm[1] |
| Process gases (RIE 1) | — | CHF3, SF6, O2, Ar[1] |
| Process gases (RIE 2) | — | CF4, CHF3, SF6, O2, Ar[1] |
| Wafer capacity (RIE 2) | — | 100 mm wafers only, no chips[1] |
| Endpoint detection (RIE 2) | — | Laser reflectometry/interferometry[1] |
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