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Comparison ledger

808-Aligner-Tool-ProceduversusCleanTrack ACT 8

OAI 808-Aligner-Tool-Procedu, Tokyo Electron CleanTrack ACT 8, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
CleanTrack ACT 8Tokyo Electron
OEMOAITokyo Electron
CategoryLithographyLithography
Wafer size100mm100mm
Process node—DUV lithography
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOAI 808-Aligner-Tool-ProceduTokyo Electron CleanTrack ACT 8
Specifications
ModelOAI Model 800 Mask Aligner[1]—
AutomationSemi-automated[1]—
Camera countFour-camera[1]—
Alignment typeOptical front- and backside mask aligner[1]—
Alignment accuracy1 µm to 2 µm[1]—
Backside focusMotorized[1]—
Auto levelingMotorized[1]—
Gap settingAuto gap setting[1]—
Supported piece size2", 100mm, 150mm, 200mm, pieces[1]—
Thickness range0.1–10 mm[1]—
Mask size4"x4"; 5"x5"; 7"x7"; 9"x9"[1]—
Top side alignment± 1.0 µm 3σ[1]—
Bottom side alignment± 1.25 µm 3σ[1]—
Large gap alignmentOption / ± 1.5 µm 3σ[1]—
ResolutionVacuum + Hard Contact ≤ 1 µm; Hard Contact ≤ 1.5 µm; Soft Contact ≤ 2.0 µm; Proximity ≥ 3.0 µm[1]—
Exposure wavelength350–450 nm[1]—
LampMercury arc lamp, 350 W[1]—
Typesemi-automated, four-camera, optical front- and backside mask aligner[1]—
Motorized backside focusyes[1]—
Motorized auto levelingyes[1]—
Auto gap settingyes[1]—
Size2 in, 100 mm, 150 mm, 200 mm[1]—
Thickness0.1-10 mm[1]—
Mercury arc lamp350 W[1]—
Equipment type—Industry-standard wafer coater and developer[2]
Lithography mode—DUV lithography[2]
Exposure interface—In-line exposure unit interface[2]
Throughput / footprint—High throughput in a small footprint[2]
Cluster configuration—Coater and developer track in-line with an ASML PAS5500/350C stepper[2]
Configured wafer size—100 mm (4") wafers[2]
Convertible wafer size—150 mm (6") wafers[2]
Process materials—KrF photoresist and ancillary anti-reflective coatings[2]
Track blocks—Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[2]
Wafer size—100 mm (4 inch) standard, convertible to 150 mm (6 inch) on demand[2]
Lithography type—DUV (KrF)[2]
In-line stepper interface—ASML PAS5500/350C[2]
Cassette ports—Four (two for 100 mm, two for 150 mm)[2]
Resist pump lines—4 for photoresist (COT), 2 for BARC (BCT)[2]
Developer lines—2 pressure-driven lines[2]
BARC materials supported—DS-K101 (Brewer Science), DUV-42P[2]
Photoresists supported—M108Y (JSR Corporation, 0.18 μm), M35G (0.25 μm)[2]
Developer used—TMA238WA[2]
Solvent used—Microposit EC Solvent (Dupont)[2]
Temperature/humidity control—Internal laminar flow with regulated temperature, humidity, and cup temperature/humidity controller (T&H)[2]
Water Flow—Left to Right[3]
Software Version—1.18.003[4]
CIM—SECS[4]
Handler System—CRA, PRA (2)[4]
Factory Interface—SMIF (3)[4]
Coater/Developer—Wafer coater and developer[2]
Configuration—In-line with ASML PAS5500/350C stepper forming a DUV lithography cluster[2]
Wafer Size (Configured)—100 mm (4")[2]
Wafer Size (Conversion Possible)—150 mm (6") - rare and on-demand[2]
Main Blocks—Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[2]
Spinning Units—Bottom-layer Coater (BCT), Coater (COT), Developer (DEV)[2]
Thermal Plates—Low-temperature Hot Plate, High-temperature Hot Plate, High-speed Chill Plate, ADHesion plates, Precision Hot Plates, Transition Station, Transition Chill Plate[2]
Interface Buffer—25-slot buffer[2]
Photoresist—KrF photoresist (M108Y, M35G)[2]
BARC—DS-K101 and DUV-42P[2]
Developer—TMA238WA[2]
External Modules—AC Power Box, Chemical Cabinet, Temperature and Humidity Controller, Thermostatic Water Supply[2]
In-line exposure unit—ASML PAS5500/350C[2]
Wafer capacity (cassette ports)—4[2]
BARC types—DS-K101 (Brewer Science) and DUV42P[2]
Photoresist types—M108Y (JSR Corporation) and M35G[2]
Exposure unit interface—in-line exposure unit interface[2]
Chemical filters—ULPA chemical filters[2]
Ovens—high-precision ovens[2]
Conversion wafer size—150 mm (6") wafers[2]
Photoresist chemistry—KrF photoresist[2]
Ancillary coating—AntiReflective Coatings[2]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]cores.research.asu.educores.research.asu.edu
  2. [2]epfl.chepfl.ch
  3. [3]inventory listing
  4. [4]inventory listing