Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm 790 RIE-PECVD, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 790 RIE-PECVDPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm Unaxis 790 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Configuration | — | Single Chamber[2] |
| Right chamber | — | CHF3 (54sccm), O2 (20sccm), H2 (20sccm), Ar (50sccm)[3] |
| Left chamber | — | Cl2 (20sccm), HBr (100sccm),[3] |
| Compatible Materials | — | Si (to etch with Cr mask, use the ORANGE RIE batchtop), TMDs, and Graphene[3] |
| Incompatible Materials | — | III-V / Hi K / Metal[3] |
| Voltage | — | 208V, 3 Phase[5] |
| Wafer sizes | — | 2, 3, 4, 5, 6, 8, 12 inch[3] |
| Chamber configuration | — | Single chamber[2] |
| Process gas supply (right chamber) | — | CHF3 (54sccm), O2 (20sccm), H2 (20sccm), Ar (50sccm)[3] |
| Process gas supply (left chamber) | — | Cl2 (20sccm), HBr (100sccm), O2 (20sccm), CF4 (50sccm), He (100sccm)[3] |
| Turbo pump base pressure | — | 10-5 Torr[3] |
| RF frequency | — | 13.56 MHz[4] |
| Electrical input | — | 200-220 Vac[4] |
| Number of process gases | — | 6[4] |
| Feature plate | — | Blank anodized aluminum[4] |
| Turbo pump capacity | — | 360 lps[4] |
| Electrode size | — | Dual 11 inch[5] |
| Voltage/phase | — | 208V, 3 phase[5] |
| Compatible materials | — | Si (with Cr mask), TMDs, Graphene[3] |
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