Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm Versaline VLN ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Versaline VLN ICPPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | Brooks TM (Transfer Module) with four Wafer Manual Load Lock |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm Versaline |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | Brooks TM (Transfer Module) with four Wafer Manual Load Lock[3] |
| Configuration | — | Manual Load Lock for Single or Multiple Wafers[2] |
| Voltage | — | 208V, 60 Hz, 3 phase[2] |
| Manufacturer | — | Plasma-Therm[2] |
| Model | — | Versaline VLN ICP[2] |
| Category | — | Etch[4] |
| Process type | — | Inductively coupled plasma[2] |
| Wafer handling | — | Manual load lock for single or multiple wafers[2] |
| Chamber | — | Single ICP chamber[3] |
| RF power supply 1 | — | ENI ACG-6B RF Power Supply – 600W @ 13.56MHz with Seren AT6NVL Matchwork & MC2 Tunner[2] |
| RF power supply 2 | — | ENI GMW-25A RF Power Supply – 2500W @2.0MHz with Seren AT25NVL Matchwork & MC2 Tunner[2] |
| Pressure controller | — | VAT PM5 Pressure Controller with Leybold Turbo pump[3] |
| Turbo pump | — | Seiko Seiki 1303CV Turbo Pump with Seiko Seiki SCU 750 controller[3] |
| Gas handling | — | (5) MFCs-gas with Isolation, Process and By-pass valves[2] |
| Backside cooling | — | He Backside Cooling[2] |
| Chamber heater | — | Watlow chamber heater and controller[2] |
| Control software | — | Windows Based OS[2] |
| Electrical | — | 208V, 60 Hz, 3 phase[2] |
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