Waferpedia

Comparison ledger

100 ICP FluorineversusNE 950 ICP-RIE

Oxford Instruments 100 ICP Fluorine, Ulvac NE 950 ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMOxford InstrumentsUlvac
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineUlvac NE 950
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]2" to 12" wafers[2]
Configuration—Gas Box:[2]
Gas 1 Horiba STEC SEC-E40 Ar—100SCCM[2]
Gas 2 Horiba STEC SEC-E40 O2—100SCCM[2]
Gas 3 Horiba STEC SEC-E40 CHF3—100SCCM[2]
Cooling Gas—MKS 649A 50SCCM[2]
Match Box 1—AMV-1000-12.5M-CT[2]
Match Box 2—AMV-1000-AV3[2]
Valve—MKS T3PIA 26696[2]
Gauge—MKS E28D[2]
Process type—ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etch)[2]
Chuck—φ 305mm (φ2’ φ4’ φ6’ φ8’)[2]
RF Generator 1—AX-1000 (AD-TEC)[2]
RF Generator 2—AX-1000 (AD-TEC)[2]
Gas 1—Horiba STEC SEC-E40 Ar: 100SCCM[2]
Gas 2—Horiba STEC SEC-E40 O2: 100SCCM[2]
Gas 3—Horiba STEC SEC-E40 CHF3: 100SCCM[2]
Gas 4—Horiba STEC SEC-E440J BCL3: 200SCCM[2]
Gas 5—Horiba STEC SEC-E440J CL2: 200SCCM[2]
Gas 6—Horiba STEC SEC-E440J SiCL4: 200SCCM[2]
Pressure valve—MKS T3PIA 26696[2]
Turbo pump—Shimadzu E1-D2203MT / TMP-2203LMTG[2]
Dry pump—Ulvac HR60[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing