Comparison ledger
Oxford Instruments NGP80, Oxford Instruments PlasmaPro80, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NGP80Oxford Instruments | PlasmaPro80Oxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments NGP80 | Oxford Instruments PlasmaPro80 |
| Cited variants | ||
| Specifications | ||
| Equipment name | Oxford NGP80 RIE[3] | — |
| Model | NGP80[4] | PlasmaPro80[2] |
| Configuration options | RIE, PECVD, RIE/PECVD[4] | — |
| Wafer size | up to 200 mm[4] | 100mm wafers[2] |
| Electrode diameter | 240 mm[1] | — |
| RF power | 300 W[5] | — |
| Substrate temperature range (standard) | 5-80 °C[5] | — |
| Substrate temperature (max) | 400 °C[4] | — |
| Cryogenic temperature option | down to -150 °C[1] | — |
| Base pressure | ≤5×10⁻⁷ mbar[4] | — |
| Process pressure range | 10 mTorr to 10 Torr[4] | — |
| Gas species (RIE variant) | O2, CF4, SF6, Ar, CHF3, N2[5] | — |
| Chuck material | graphite[5] | — |
| Process Type | Reactive Ion Etch (RIE)[5] | — |
| Wafer Handling | pieces (unmounted), 100 mm, 150 mm[5] | — |
| Chuck Temperature Range | 5–80 °C[5] | — |
| Gas Species | O2, CF4, SF6, Ar, CHF3, N2[5] | — |
| Location | room W1-062[6] | — |
| OEM | — | Oxford Instruments[2] |
| Tool type | — | RIE dry etcher[2] |
| Chemistry | — | fluorine chemistry[2] |
| Process gases | — | CHF3, SF6, O2, Ar[2] |
| Maximum power | — | 300 W @ 13.56 MHz[2] |
| Load system | — | Open-load system (no load lock)[2] |
| Wafer handling | — | chips to wafer up to 200mm[2] |
| Applications | — | hBN, SiGe, graphite and graphene soft etching[2] |
| Endpoint detection | — | Laser reflectometry/interferometry end-point-detection[2] |
| Process type | — | RIE (Reactive Ion Etching), dry etcher[2] |
| Wafer size (max) | — | 200 mm[2] |
| Loading design | — | Open loading design (quick wafer loading/unloading)[7] |
| Wafer temperature control | — | Superior wafer temperature uniformity[7] |
| Compliance standards | — | Semi S2/S8[7] |
| Maximum wafer size | — | 200 mm[2] |
| Process gases (RIE 1) | — | CHF3, SF6, O2, Ar[2] |
| Process gases (RIE 2) | — | CF4, CHF3, SF6, O2, Ar[2] |
| Wafer capacity (RIE 2) | — | 100 mm wafers only, no chips[2] |
| Endpoint detection (RIE 2) | — | Laser reflectometry/interferometry[2] |
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