Advantest
The Advantest T5375 is a memory test system designed for high-throughput testing of 300mm front-end DRAMs and high-speed back-end flash memories. The T5375 can test up to 128 devices simultaneously at speeds up to 286 MHz DDR. The T5375 was introduced in June 2001.[1]
The Advantest T5375 is a memory test system designed for high-throughput testing of 300mm front-end DRAMs and high-speed back-end flash memories. The T5375 was introduced in June 2001. The T5375 is capable of testing up to 128 devices simultaneously at speeds of either 143 MHz or 286 MHz DDR. The T5375 is a low-footprint system for front-end testing of commodity memories such as DRAM, Synchronous DRAM, Double Data Rate SDRAM, and SRAM, as well as back-end testing of flash memories.[1]
The T5375 can provide testing speeds of either 143 MHz or 286 MHz DDR. The T5375 is capable of simultaneous testing up to 128 flash memory devices. For each device, it runs a separate control function to prevent excessive writing and erasing. The T5375 allows testing of defective blocks on a block-by-block basis and lets each device independently set masks that prevent blocks from being tested. The T5375 employs Zero Insertion Force (ZIF) sockets to interface with the device under test, enabling a large number of signals to be transmitted with high precision. The system's software is compatible with other Advantest memory test system series, allowing users to reuse test programs. The T5375 includes an enclosed Shinwa chilling system that recirculates coolant throughout the test head and mainframe.[1]
The T5375 is designed for high-throughput testing for 300mm front-end DRAMs and high-speed back-end flash memories. The T5375 performs front-end testing of commodity memories such as DRAM, Synchronous DRAM, Double Data Rate SDRAM, and SRAM, as well as back-end testing of flash memories. The system is equipped for redundancy analysis to support efficient testing of 300mm wafers.[1]
The T5375 can test a range of memory devices including DRAM, SDRAM, DDR SDRAM, Direct Rambus DRAM, NOR Flash, NAND Flash, EPROM, EEPROM, and Mask ROM. The T5375 is designed for back-end testing of high-speed synchronous flash memories. The T5375 supports masking of defective blocks on a block-by-block basis to reduce test times for NAND flash memories.[1]
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Introduced in June 2001
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The following facts about the T5375 High-Speed Flash Memory are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
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Last updated Sep 24, 2026.
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